feb.1999 mitsubishi transistor modules qm50dy-2hb medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, ups, dc motor controllers, nc equipment, welders qm50dy-2hb ? i c collector current .......................... 50a ? v cex collector-emitter voltage ......... 1000v ? h fe dc current gain............................. 750 ? insulated type ? ul recognized yellow card no. E80276 (n) file no. e80271 108 93 (7.5) (7.5) 12 46.5 f 6.5 23 23 5 13 10.5 34 10.5 c 2 e 1 e 2 c 1 b 2 e 2 e 1 b 1 37 30 88 15 m5 tab#110, t=0.5 6.5 23 label c 2 e 1 e 2 b 2 e 2 c 1 e 1 b 1
feb.1999 absolute maximum ratings (tj=25 c, unless otherwise noted) electrical characteristics (tj=25 c, unless otherwise noted) unit ma ma ma v v v m s m s m s c/w c/w c/w limits min. 750 symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm t j t stg v iso parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) junction temperature storage temperature isolation voltage mounting torque weight conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) charged part to case, ac for 1 minute main terminal screw m5 mounting screw m6 typical value ratings 1000 1000 1000 7 50 50 400 3 50 C40~+150 C40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 unit v v v v a a w a a c c v nm kgcm nm kgcm g symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) test conditions v ce =1000v, v eb =2v v cb =1000v, emitter open v eb =7v i c =50a, i b =67ma Ci c =50a (diode forward voltage) i c =50a, v ce =4v v cc =600v, i c =50a, i b1 =100ma, i b2 =C1.0a transistor part (per 1/2 module) diode part (per 1/2 module) conductive grease applied (per 1/2 module) typ. max. 2.0 2.0 50 4.0 4.0 1.8 2.5 15 3.0 0.31 1.2 0.13 mitsubishi transistor modules qm50dy-2hb medium power switching use insulated type
feb.1999 0 10 ? 10 ? 10 ? 10 0 10 ? 10 7 5 4 3 2 ? 10 7 5 4 3 2 2.8 3.2 3.6 4.0 4.4 4.8 v ce =4v t j =25? 100 80 60 40 20 0 012345 t j =25? i b =400ma i b =200ma i b =67ma i b =20ma i b =10ma 4 10 7 5 4 3 2 3 10 7 5 4 3 2 2 10 0 10 23457 1 10 23457 2 10 v ce =4v t j =25? t j =125? v ce =10v 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 v ce(sat) v be(sat) t j =25? t j =125? i b =67ma 0 7 5 3 2 7 5 3 2 7 5 3 2 5 4 3 2 1 444 t j =25? t j =125? i c =30a i c =50a 1 10 7 5 4 3 2 0 10 7 5 4 3 3457 2 3457 2 10 3 2 23 t j =25? t j =125? t f t on t s v cc =600v i b1 =100ma ? b2 =1a 1 10 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules qm50dy-2hb medium power switching use insulated type
feb.1999 1 10 0 10 0 10 ? 10 ? 10 ? 10 3 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 100 80 60 40 20 0 0 200 400 600 800 1000 t j =125? i b2 =?a 1 10 7 5 4 3 2 ? 10 23457 0 10 23457 1 10 0 10 7 5 4 3 3 2 t j =25? t j =125? t s t f v cc =600v i c =50a i b1 =100ma 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 444 t c =25? 50 s dc 1m s 100 90 60 40 20 0 0 160 20 40 60 80 100 120 140 80 10 70 50 30 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 0.5 0.4 0.3 0.1 0 444 23457 0.2 3 2 457 non?epetitive collector dissipation second breakdown area switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules qm50dy-2hb medium power switching use insulated type z th (jCc) ( c/ w)
feb.1999 1 10 0 10 0 10 ? 10 ? 10 ? 10 ? 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 2 10 7 5 4 3 2 1 10 7 5 4 3 2 0 10 0 10 23457 1 10 23457 2 10 i b1 =100ma ? b2 =1a v cc =600v t j =125? t j =25? i rr t rr q rr 7 5 3 2 7 5 3 2 7 5 3 2 2.0 1.6 1.2 0.8 0.4 0 444 23457 3 2 5 4 1.8 1.4 1.0 0.6 0.2 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) transient thermal impedance characteristic (diode ) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) mitsubishi transistor modules qm50dy-2hb medium power switching use insulated type z th (jCc) ( c/ w) t rr ( m s)
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